| PART |
Description |
Maker |
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MIG20J806HA MIG20J806H EE08617 |
Silicon N-channel integrated IGBT module for high power switching, motor control applications
N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
From old datasheet system
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) N通道IGBT的（大功率开关，马达控制应用
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| FS50UMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| 2SJ549 2SJ549L 2SJ549S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| MP4703 E002536 |
HIGH POWER , HIGH SPEED SWITCHING APPLICATIONS HA MMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| MP4201 E002500 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| MP4401 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS / HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
|
Toshiba Semiconductor
|
| MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
| QM75E3Y-H QM75E2Y-H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
